Surface mount N-channel and P-channel JFET with 20V drain-source voltage and 4A continuous drain current. Features low 55mΩ Rds(on) and 120mΩ drain-source resistance. Operates from -55°C to 150°C with 3.1W maximum power dissipation. This silicon Metal-oxide Semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power1.7W
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Technical Specifications
Vishay SI5513CDC-T1-GE3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
4A
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
150mR
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Input Capacitance
285pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Nominal Vgs
600mV
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
1.7W
Radiation Hardening
No
Rds On Max
55mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Weight
0.002998oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI5513CDC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5513CDC-T1-GE3 to view detailed technical specifications.
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