Dual-channel N-channel and P-channel small-signal MOSFET for general-purpose applications. Features a 20V drain-source breakdown voltage and a continuous drain current of 4.2A. Offers low on-resistance with a maximum of 75mR at a nominal gate-source voltage of 1.5V. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 1.1W. Packaged in a compact 1206 surface-mount case, this RoHS compliant component is ideal for space-constrained designs.
Package1206
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI5513DC-T1-E3 technical specifications.
General
Package/Case
1206
Continuous Drain Current (ID)
4.2A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
155mR
Dual Supply Voltage
20V
Fall Time
35ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
12V
Height
0.043inch
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Nominal Vgs
1.5V
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Polarization
N
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
75mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
1.5V
Turn-Off Delay Time
25ns
Turn-On Delay Time
13ns
Width
0.067inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI5513DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5513DC-T1-E3 to view detailed technical specifications.
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