Dual-channel N-channel and P-channel MOSFET for general-purpose small signal applications. Features a continuous drain current of 4.4A and a drain-source voltage of 20V. Offers a low drain-source on-resistance of 40mR. Operates within a temperature range of -55°C to 150°C. Packaged in a surface-mount 1206 case, supplied on tape and reel.
Package1206
MountingSurface Mount
PolarityN-CHANNEL, P-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI5515DC-T1-E3 technical specifications.
General
Package/Case
1206
Continuous Drain Current (ID)
4.4A
Drain to Source Resistance
69mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
40mR
Fall Time
32ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
8V
Height
1.1mm
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Nominal Vgs
400mV
Number of Channels
2
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL, P-CHANNEL
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
400mV
Turn-Off Delay Time
42ns
Turn-On Delay Time
18ns
Weight
0.002998oz
Width
1.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI5515DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5515DC-T1-E3 to view detailed technical specifications.
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