P-channel Power MOSFET, 20V Drain-Source Voltage, 3.7A Continuous Drain Current. Features a Chip FET package with 8 pins, surface mountable with flat leads. Maximum power dissipation of 1900mW, operating temperature range from -55°C to 150°C. Low on-resistance of 144mOhm at 4.5V gate-source voltage.
PackageChip FET
MountingSurface Mount
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Technical Specifications
Vishay Si5855CDC technical specifications.
General
| Package Family Name | Chip FET |
| Package/Case | Chip FET |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 1.65 |
| Package Height (mm) | 1.1(Max) |
| Seated Plane Height (mm) | 1.14(Max) |
| Pin Pitch (mm) | 0.65 |
| Mounting | Surface Mount |
| Configuration | Single Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 3.7A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 4.5@5V|[email protected]nC |
| Typical Input Capacitance @ Vds | 276@10VpF |
| Maximum Power Dissipation | 1900mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay Si5855CDC Datasheet
Download the complete datasheet for Vishay Si5855CDC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.