Dual N-channel MOSFET transistor featuring 30V drain-source voltage and 4A continuous drain current. Surface mount device with 65mΩ maximum drain-source on-resistance at a nominal gate-source voltage of 1.5V. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 3.12W. This RoHS compliant component is supplied in a 1206 ChipFET package on tape and reel.
PackageSMD/SMT
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI5902BDC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 65mR |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 220pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.12W |
| Mount | Surface Mount |
| Nominal Vgs | 1.5V |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 3V |
| Weight | 0.002998oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5902BDC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5902BDC-T1-GE3 to view detailed technical specifications.
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