P-channel MOSFET, designed for general-purpose small signal applications. Features a 2.1A continuous drain current and a -20V drain-to-source breakdown voltage. Offers a low drain-source on-resistance of 155mR. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.1W. Packaged in an 8-pin SMD/SMT small outline, tape and reel for surface mounting.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI5903DC-T1-E3 technical specifications.
General
Package/Case
SMD/SMT
Continuous Drain Current (ID)
2.1A
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
155mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
155mR
Fall Time
25ns
Gate to Source Voltage (Vgs)
12V
Height
0.043inch
Lead Free
Lead Free
Length
0.122inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.1W
Mount
Surface Mount
Number of Elements
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
1.1W
Radiation Hardening
No
Rds On Max
155mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-600mV
Turn-Off Delay Time
25ns
Turn-On Delay Time
13ns
Width
0.067inch
Compliance
RoHS
Compliant
Datasheet
Vishay SI5903DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5903DC-T1-E3 to view detailed technical specifications.
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