The SI5913DC-T1-GE3 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.7A and a drain to source resistance of 84mR. The device is packaged in a surface mount package and is RoHS compliant. The MOSFET has a maximum power dissipation of 3.1W and a fall time of 10ns.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI5913DC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.7A |
| Drain to Source Resistance | 84mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 330pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 84mR |
| RoHS Compliant | Yes |
| Series | LITTLE FOOT® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 18ns |
| Weight | 0.002998oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5913DC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5913DC-T1-GE3 to view detailed technical specifications.
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