P-channel MOSFET, 8V Vds, 3.4A continuous drain current, and 70mΩ Rds On. Features a 1206-8 SMD/SMT package for surface mounting, with a maximum power dissipation of 1.1W. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 20ns and fall time of 70ns.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power2.1W
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Technical Specifications
Vishay SI5915DC-T1-E3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.4A |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5915DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5915DC-T1-E3 to view detailed technical specifications.
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