P-channel MOSFET with 20V drain-source voltage and 2.7A continuous drain current. Features low 11mΩ drain-source resistance at 10V gate-source voltage. Surface mountable in a 1206-8 package, this component offers fast switching with turn-on and turn-off delay times of 30ns and 27ns respectively. Operating across a -55°C to 150°C temperature range, it supports a maximum power dissipation of 1.1W.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI5933DC-T1-E3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 11mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.1W |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5933DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5933DC-T1-E3 to view detailed technical specifications.
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