P-channel enhancement mode power MOSFET featuring 20V drain-source voltage and 4A continuous drain current. This 8-pin surface mount component, housed in a Chip FET package with flat leads and 0.65mm pin pitch, offers a maximum power dissipation of 1300mW. It operates across a temperature range of -55°C to 150°C and includes dual drain configurations.
PackageChip FET
MountingSurface Mount
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Technical Specifications
Vishay Si5935CDC technical specifications.
General
| Package Family Name | Chip FET |
| Package/Case | Chip FET |
| Lead Shape | Flat |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 1.65 |
| Package Height (mm) | 1.1(Max) |
| Seated Plane Height (mm) | 1.14(Max) |
| Pin Pitch (mm) | 0.65 |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 4A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | 7@5V|[email protected]nC |
| Typical Input Capacitance @ Vds | 455@10VpF |
| Maximum Power Dissipation | 1300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay Si5935CDC Datasheet
Download the complete datasheet for Vishay Si5935CDC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.