The SI5935DC-T1-GE3 is a TrenchFET N-Channel MOSFET from Vishay with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 1.1W and a maximum drain to source voltage of 20V. This device is RoHS compliant and is available in a surface mount package. The device's continuous drain current is 3A and its Rds on max is 86mR.
PackageSMD/SMT
MountingSurface Mount
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Technical Specifications
Vishay SI5935DC-T1-GE3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Voltage (Vdss) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 86mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5935DC-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5935DC-T1-GE3 to view detailed technical specifications.
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