Dual P-channel MOSFET featuring 12V drain-source voltage and 6A continuous drain current. Offers a maximum drain-source on-resistance of 64mΩ at 10V gate-source voltage. This surface-mount component boasts fast switching speeds with a 5ns turn-on delay and 7ns fall time. Operating across a wide temperature range from -55°C to 150°C, it supports a maximum power dissipation of 8.3W.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI5943DU-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 6A |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 64mR |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.75mm |
| Input Capacitance | 460pF |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.3W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 64mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 5ns |
| Width | 1.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5943DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5943DU-T1-GE3 to view detailed technical specifications.
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