Dual N-Channel MOSFET, 40V Vdss, 3.28A continuous drain current, and 112mR Rds On. Features include 4ns turn-on delay, 6ns fall time, and 10ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 10W. Surface mountable in an 8PWRPAK package, this RoHS compliant component is ideal for demanding applications.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI5944DU-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 3.28A |
| Drain to Source Resistance | 112mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 6ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 210pF |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 112mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 4ns |
| Width | 1.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5944DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5944DU-T1-GE3 to view detailed technical specifications.
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