P-channel MOSFET featuring a 12V drain-source voltage and 3.1A continuous drain current. This dual-channel device offers a low 86mΩ drain-source on-resistance and is packaged in a compact SMD/SMT format for surface mounting. Operating across a wide temperature range from -55°C to 150°C, it boasts fast switching speeds with a 10ns turn-on delay and 20ns fall time. Maximum power dissipation is rated at 1.1W.
PackageSMD/SMT
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI5975DC-T1-E3 technical specifications.
General
| Package/Case | SMD/SMT |
| Continuous Drain Current (ID) | 3.1A |
| Drain to Source Resistance | 86mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.1mm |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 86mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.002998oz |
| Width | 1.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5975DC-T1-E3 Datasheet
Download the complete datasheet for Vishay SI5975DC-T1-E3 to view detailed technical specifications.
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