N-channel enhancement mode Power MOSFET, dual dual drain configuration, featuring 100V drain-source voltage and 2.5A continuous drain current. This 8-pin PowerPAK ChipFET utilizes a non-lead-frame SMT package with a compact 3mm x 1.9mm footprint and 0.8mm maximum height. It offers a low 567mOhm maximum drain-source resistance at 10V, with typical gate charge of 2.2nC and input capacitance of 78pF. Operating temperature range spans from -55°C to 150°C.
PackagePowerPAK ChipFET
MountingSurface Mount
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Technical Specifications
Vishay Si5980DU technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | Chip FET |
| Package/Case | PowerPAK ChipFET |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3 |
| Package Width (mm) | 1.9 |
| Package Height (mm) | 0.8(Max) |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Dual Dual Drain |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 2.5A |
| Maximum Drain Source Resistance | 567@10VmOhm |
| Typical Gate Charge @ Vgs | 2.2@10VnC |
| Typical Gate Charge @ 10V | 2.2nC |
| Typical Input Capacitance @ Vds | 78@50VpF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | No |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay Si5980DU Datasheet
Download the complete datasheet for Vishay Si5980DU to view detailed technical specifications.
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