Vishay
SI5997DU-T1-GE3
SI5997DU-T1-GE3 Dual P-channel MOSFET Transistor; 4.1A; 30V; 8-Pin PowerPAK ChipFET
MountingSurface Mount
PolarityP-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI5997DU-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
-6A
Drain to Source Resistance
54mR
Drain to Source Voltage (Vdss)
-30V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
430pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
10.4W
Mount
Surface Mount
Number of Channels
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Rds On Max
54mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.2V
Weight
0.002998oz
Compliance
RoHS
Compliant
Datasheet
Vishay SI5997DU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5997DU-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
