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Technical Specifications
Vishay SI5999EDU-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -6A |
| Drain to Source Resistance | 47mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 59mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 496pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 10.4W |
| Mount | Surface Mount |
| Nominal Vgs | -600mV |
| Number of Channels | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 59mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI5999EDU-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI5999EDU-T1-GE3 to view detailed technical specifications.
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