N-channel MOSFET with 30V drain-source voltage and 8.6A continuous drain current. Features low 9mΩ drain-to-source resistance and operates within a -55°C to 150°C temperature range. Surface mountable in an 8-pin TSSOP package, this component offers fast switching with turn-on delay of 35ns and fall time of 50ns. Maximum power dissipation is 1.08W.
PackageTSSOP
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI6404DQ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.08W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 35ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6404DQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6404DQ-T1-GE3 to view detailed technical specifications.
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