P-channel, surface-mount MOSFET with a continuous drain current of 4A and a drain-to-source breakdown voltage of 12V. Features a low drain-source on-resistance of 40mΩ, a nominal gate-source voltage of -1.5V, and a threshold voltage of -1.5V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.05W. Packaged in a TSSOP-8 for tape and reel, this component is RoHS compliant.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.05W
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Technical Specifications
Vishay SI6433BDQ-T1-GE3 technical specifications.
General
Package/Case
TSSOP
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
12V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
-12V
Drain-source On Resistance-Max
40MR
Fall Time
60ns
Gate to Source Voltage (Vgs)
8V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.05W
Mount
Surface Mount
Nominal Vgs
-1.5V
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
1.05W
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
-1.5V
Turn-Off Delay Time
70ns
Turn-On Delay Time
45ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI6433BDQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6433BDQ-T1-GE3 to view detailed technical specifications.
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