The SI6435ADQ-T1-E3/BKN is a surface mount N-channel MOSFET with a breakdown voltage of -30V and a maximum operating temperature of 150°C. It has a power dissipation of 1.05W and a drain to source resistance of 11.8mR. The device is packaged in a TSSOP package and has a height of 0.041inch and a length of 0.177inch. It is suitable for use in a variety of applications, including power management and switching circuits.
PackageTSSOP
MountingSurface Mount
PolarityP
Power1.05W
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Technical Specifications
Vishay SI6435ADQ-T1-E3/BKN technical specifications.
General
| Package/Case | TSSOP |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 11.8mR |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.041inch |
| Length | 0.177inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Polarization | P |
| Power Dissipation | 1.05W |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 20ns |
| Width | 0.122inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6435ADQ-T1-E3/BKN Datasheet
Download the complete datasheet for Vishay SI6435ADQ-T1-E3/BKN to view detailed technical specifications.
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