P-channel MOSFET, 30V drain-source voltage, 4.5A continuous drain current, and 40mΩ drain-to-source resistance. Features a 1.5W maximum power dissipation and operates within a -55°C to 150°C temperature range. This surface-mount component is housed in a TSSOP package with dimensions of 3mm x 4.4mm x 1mm. Includes fast switching characteristics with a 12ns turn-on delay and 13ns fall time.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.05W
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Technical Specifications
Vishay SI6435DQ-T1 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Resistance | 40mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.05W |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Series | SI6 |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.000705oz |
| Width | 4.4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay SI6435DQ-T1 Datasheet
Download the complete datasheet for Vishay SI6435DQ-T1 to view detailed technical specifications.
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