P-channel MOSFET, 20V drain-source voltage, 6.2A continuous drain current, and 15mΩ maximum drain-source on-resistance. Features a 150°C maximum operating temperature and 1.05W power dissipation. Packaged in an 8-TSSOP surface-mount configuration, this component offers fast switching with turn-on delay of 35ns and fall time of 40ns. RoHS compliant and lead-free.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.05W
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Technical Specifications
Vishay SI6463BDQ-T1-E3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 15mR |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.041inch |
| Lead Free | Lead Free |
| Length | 0.177inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.05W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 1.05W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 35ns |
| Width | 0.122inch |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6463BDQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6463BDQ-T1-E3 to view detailed technical specifications.
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