P-Channel MOSFET with -20V drain-source breakdown voltage and 6.2A continuous drain current. Features low 15mΩ Rds On and operates within a -55°C to 150°C temperature range. Surface mountable in an 8-TSSOP package, this component offers 1.05W max power dissipation and is RoHS compliant. Ideal for power switching applications requiring efficient performance.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.5W
Quick Jump:
Technical Specifications
Vishay SI6463BDQ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.05W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.5W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -800mV |
| Turn-Off Delay Time | 190ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6463BDQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6463BDQ-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.