P-channel MOSFET with 8V drain-source voltage and 8.8A continuous drain current. Features low 12mΩ drain-to-source resistance and 1.5W maximum power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in an 8-pin TSSOP for surface mounting, with dimensions of 3mm length, 4.4mm width, and 1mm height. Includes fast switching times with turn-on delay of 30ns and fall time of 60ns.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI6465DQ-T1-E3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 8.8A |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 30ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6465DQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6465DQ-T1-E3 to view detailed technical specifications.
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