P-channel MOSFET with 12V drain-source breakdown voltage and 6.8A continuous drain current. Features low 12.5mΩ drain-source on-resistance and 1.05W maximum power dissipation. Operates from -55°C to 150°C, packaged in TSSOP for surface mounting. Includes fast switching times with 45ns turn-on delay and 85ns fall time. RoHS compliant and lead-free.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.05W
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Technical Specifications
Vishay SI6467BDQ-T1-E3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 12.5mR |
| Drain to Source Voltage (Vdss) | -12V |
| Drain-source On Resistance-Max | 12.5mR |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.05W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.05W |
| Radiation Hardening | No |
| Rds On Max | 12.5mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 450mV |
| Turn-Off Delay Time | 220ns |
| Turn-On Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6467BDQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6467BDQ-T1-E3 to view detailed technical specifications.
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