P-channel MOSFET in TSSOP package, featuring 20V drain-source voltage and 6.2A continuous drain current. Offers low 12.5mΩ drain-source on-resistance at 2.5V gate-source voltage. Operates across a -55°C to 150°C temperature range with 1.08W maximum power dissipation. Surface mountable with a compact 3mm x 4.4mm x 1mm footprint. RoHS compliant and lead-free.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power80mW
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Technical Specifications
Vishay SI6473DQ-T1-E3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6.2A |
| Drain to Source Resistance | 12.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 12.5MR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.08W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 80mW |
| Rds On Max | 12.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 220ns |
| Turn-On Delay Time | 42ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6473DQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6473DQ-T1-E3 to view detailed technical specifications.
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