Vishay
SI6475DQ-T1-E3
MOSFET; Transistor Polarity: N and P Channel; Continuous Drain Current Id: -7.8A;
MOSFET; Transistor Polarity: N and P Channel; Continuous Drain Current Id: -7.8A;
PackageTSSOP
PolarityP-CHANNEL
Power1.08W
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Technical Specifications
Vishay SI6475DQ-T1-E3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 7.8A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 11mR |
| Fall Time | 62ns |
| Gate to Source Voltage (Vgs) | 8V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.08W |
| Turn-Off Delay Time | 300ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6475DQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6475DQ-T1-E3 to view detailed technical specifications.
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