The SI6543DQ-T1-GE3 is a dual N-Channel P-Channel MOSFET from Vishay, packaged in a TSSOP package. It can handle a continuous drain current of 3.9A and has a drain to source resistance of 85mR. The device is rated for a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is RoHS compliant and available in a tape and reel packaging format with 3000 units per package.
PackageTSSOP
PolarityN-CHANNEL, P-CHANNEL
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Technical Specifications
Vishay SI6543DQ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| RoHS Compliant | Yes |
| Series | SI6 |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.005573oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6543DQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6543DQ-T1-GE3 to view detailed technical specifications.
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