The SI6866BDQ-T1 is a N-CHANNEL Power MOSFET with a continuous drain current of 6A and a drain to source breakdown voltage of 20V. It features a drain to source resistance of 27mR and a fall time of 53ns. The device operates within a temperature range of -55°C to 150°C and is available in a TSSOP package. It is not RoHS compliant.
PackageTSSOP
PolarityN-CHANNEL
Power1.2W
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Technical Specifications
Vishay SI6866BDQ-T1 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 27mR |
| Fall Time | 53ns |
| Gate to Source Voltage (Vgs) | 12V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.2W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI6866BDQ-T1 Datasheet
Download the complete datasheet for Vishay SI6866BDQ-T1 to view detailed technical specifications.
No datasheet is available for this part.