Dual N-channel MOSFET featuring 30V drain-source breakdown voltage and 4A continuous drain current. Surface mountable in an 8-pin TSSOP package, this component offers a maximum drain-source on-resistance of 35mΩ. Operating across a wide temperature range of -55°C to 150°C, it supports a gate-source voltage up to 20V and has a power dissipation of 1W. This RoHS compliant device exhibits fast switching characteristics with turn-on delay time of 12ns and fall time of 20ns.
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| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 35mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 35MR |
| Fall Time | 20ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Rds On Max | 35mR |
| RoHS Compliant | Yes |
| Series | SI6928DQ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 12ns |
| RoHS | Compliant |
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