SI6933DQ-T1-E3

N-Ch/P-Ch JFET, 3.5A ID, 30V Vdss, 45mR Rds(on), TSSOP

Surface mount N-channel and P-channel silicon FET with 3.5A continuous drain current and 30V drain-source voltage. Features low 45mΩ drain-source on-resistance, 1W power dissipation, and operates from -55°C to 150°C. Packaged in TSSOP-8 with fast switching times, including 13ns turn-on and 10ns fall times. RoHS compliant and lead-free.

PackageTSSOP

MountingSurface Mount

PolarityP-CHANNEL

Power1W

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Technical Specifications

Vishay SI6933DQ-T1-E3 technical specifications.

General

Package/Case	TSSOP
Continuous Drain Current (ID)	3.5A
Drain to Source Breakdown Voltage	-30V
Drain to Source Resistance	45mR
Drain to Source Voltage (Vdss)	30V
Drain-source On Resistance-Max	45mR
Fall Time	10ns
Gate to Source Voltage (Vgs)	20V
Height	1mm
Lead Free	Lead Free
Length	3mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Surface Mount
Number of Channels	2
Package Quantity	3000
Packaging	Tape and Reel
Polarity	P-CHANNEL
Polarization	P
Power Dissipation	1W
Rds On Max	45mR
RoHS Compliant	Yes
Series	TrenchFET®
Turn-Off Delay Time	33ns
Turn-On Delay Time	13ns
Weight	0.005573oz
Width	4.4mm