Vishay
SI6963DQ-T1-E3
Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
PackageTSSOP
PolarityP-CHANNEL
Power830mW
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Technical Specifications
Vishay SI6963DQ-T1-E3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | -20V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 830mW |
| RoHS Compliant | Yes |
| Series | SI6 |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6963DQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6963DQ-T1-E3 to view detailed technical specifications.
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