The SI6967DQ-T1 is a P-channel MOSFET with a continuous drain current of 5A and a drain to source resistance of 30mR. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1.1W. The device is packaged in TSSOP and is available in quantities of 3000 per reel.
PackageTSSOP
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI6967DQ-T1 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | -8V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| RoHS Compliant | No |
| Series | SI6 |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.000705oz |
| Width | 4.4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay SI6967DQ-T1 Datasheet
Download the complete datasheet for Vishay SI6967DQ-T1 to view detailed technical specifications.
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