P-channel MOSFET with 8V drain-source voltage (Vdss) and 5A continuous drain current (ID). Features low 30mΩ drain-to-source resistance (Rds On Max) and 8V gate-source voltage (Vgs). This surface mount component, housed in an 8-pin TSSOP package, offers fast switching with 20ns turn-on and 85ns turn-off delay times. Maximum power dissipation is 1.1W, operating between -55°C and 150°C.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.1W
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Technical Specifications
Vishay SI6967DQ-T1-E3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 5A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 8V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.1W |
| Rds On Max | 30mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6967DQ-T1-E3 Datasheet
Download the complete datasheet for Vishay SI6967DQ-T1-E3 to view detailed technical specifications.
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