P-channel MOSFET, 12V drain-source voltage, 4A continuous drain current, and 30mΩ drain-source resistance. Features 2 channels in a surface-mount TSSOP package with a maximum power dissipation of 830mW. Operating temperature range from -55°C to 150°C, with typical turn-on delay of 20ns and fall time of 35ns.
PackageTSSOP
Resistance0.03R
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI6969BDQ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1mm |
| Length | 3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Rds On Max | 30mR |
| Resistance | 0.03R |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 20ns |
| Weight | 0.005573oz |
| Width | 4.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6969BDQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6969BDQ-T1-GE3 to view detailed technical specifications.
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