P-channel MOSFET with 20V drain-source breakdown voltage and 4.1A continuous drain current. Features low 31mΩ drain-source on-resistance at 4.5V gate-source voltage. Surface mount TSSOP package with 1.14W power dissipation and operating temperature range of -55°C to 150°C. RoHS compliant with fast switching times including 35ns turn-on delay and 52ns fall time.
PackageTSSOP
MountingSurface Mount
PolarityP-CHANNEL
Power1.14W
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Technical Specifications
Vishay SI6981DQ-T1-GE3 technical specifications.
General
| Package/Case | TSSOP |
| Continuous Drain Current (ID) | 4.1A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 31mR |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 8V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.14W |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -900mV |
| Turn-Off Delay Time | 120ns |
| Turn-On Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI6981DQ-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI6981DQ-T1-GE3 to view detailed technical specifications.
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