N-Channel MOSFET, surface mount, featuring a 12V Drain-Source Voltage (Vdss) and a maximum continuous drain current of 35A. Offers a low Drain-Source On-Resistance (Rds On) of 3.8mR at a nominal Gate-Source Voltage (Vgs) of 4.00mV. This component operates within a temperature range of -50°C to 150°C with a maximum power dissipation of 52W. Packaging is Tape and Reel, with a package quantity of 3000 units.
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI7102DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Drain to Source Resistance | 3.8mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 3.8mR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Input Capacitance | 3.72nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Nominal Vgs | 400mV |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.8mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 400mV |
| Turn-Off Delay Time | 53ns |
| Turn-On Delay Time | 27ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7102DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7102DN-T1-GE3 to view detailed technical specifications.
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