P-channel Power MOSFET featuring TrenchFET technology for enhanced performance. This single, enhancement-mode MOSFET offers a maximum drain-source voltage of 20V and a continuous drain current of 9.8A. Housed in an 8-pin PowerPAK 1212 surface-mount package with no leads, it boasts a low seated plane height of 1.04mm and a package size of 3.05mm x 3.05mm. Key electrical characteristics include a maximum drain-source resistance of 10.8 mOhm at 4.5V and a typical gate charge of 34nC at 4.5V, with a maximum power dissipation of 3800mW.
PackagePowerPAK 1212
MountingSurface Mount
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Technical Specifications
Vishay SI7107DN-T1-GE3 technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | PowerPAK 1212 |
| Package/Case | PowerPAK 1212 |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 3.05 |
| Package Height (mm) | 1.07(Max) |
| Seated Plane Height (mm) | 1.04 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Process Technology | TrenchFET |
| Maximum Drain Source Voltage | 20V |
| Maximum Gate Source Voltage | ±8V |
| Maximum Continuous Drain Current | 9.8A |
| Maximum Drain Source Resistance | [email protected]mOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Maximum Power Dissipation | 3800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 18612 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Vishay SI7107DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7107DN-T1-GE3 to view detailed technical specifications.
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