P-Channel PowerPAK 1212 MOSFET with 150V Vdss and 2.3A continuous drain current. Features low 295mR Rds On, 52W max power dissipation, and 1.19nF input capacitance. Operates from -50°C to 150°C with fast switching times including 11ns turn-on delay and 35ns fall time. Surface mountable, lead-free, and RoHS compliant.
Vishay SI7115DN-T1-E3 technical specifications.
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Resistance | 295mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 1.19nF |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -50°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 295mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 11ns |
| Width | 3.05mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7115DN-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.