P-channel MOSFET featuring a 30V drain-source voltage and 10.6A continuous drain current. Offers a low 18mΩ maximum drain-source on-resistance. Designed for surface mounting with a compact 3.05mm x 3.05mm x 1.04mm package. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 52W. Includes fast switching characteristics with turn-on delay of 44ns and fall time of 15ns.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7121DN-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
10.6A
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
-30V
Drain-source On Resistance-Max
18mR
Dual Supply Voltage
30V
Fall Time
15ns
Gate to Source Voltage (Vgs)
25V
Height
1.04mm
Input Capacitance
1.96nF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
52W
Mount
Surface Mount
Nominal Vgs
-3V
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Radiation Hardening
No
Rds On Max
18mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
-3V
Turn-Off Delay Time
28ns
Turn-On Delay Time
44ns
Width
3.05mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7121DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7121DN-T1-GE3 to view detailed technical specifications.
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