P-Channel PowerPAK MOSFET with 20V drain-source voltage and 16A continuous drain current. Features low 8.6mR drain-source on-resistance and 10.6mR Rds On Max. Operates with 8V gate-source voltage, exhibiting 25ns turn-on delay and 88ns fall time. Surface mountable in a compact 3.3mm x 3.3mm x 1.04mm package, this RoHS compliant component offers a maximum power dissipation of 1.5W.
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7123DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 8.6mR |
| Drain to Source Voltage (Vdss) | -20V |
| Drain-source On Resistance-Max | 10.6mR |
| Fall Time | 88ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.04mm |
| Input Capacitance | 3.729nF |
| Lead Free | Lead Free |
| Length | 3.3mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 10.6mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 82ns |
| Turn-On Delay Time | 25ns |
| Width | 3.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7123DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7123DN-T1-GE3 to view detailed technical specifications.
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