P-channel MOSFET with 20V drain-source voltage and 42A continuous drain current. Features low 1.95mΩ drain-source on-resistance and 104W maximum power dissipation. Surface mountable in an 8-pin PowerPAK SO package, this component offers fast switching with turn-on delay of 100ns and fall time of 110ns. Operating temperature range from -55°C to 150°C, it is RoHS compliant.
MountingSurface Mount
PolarityP-CHANNEL
Power6.25W
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Technical Specifications
Vishay SI7137DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
42A
Drain to Source Resistance
1.95mR
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
1.95mR
Fall Time
110ns
Gate to Source Voltage (Vgs)
12V
Height
1.04mm
Input Capacitance
20nF
Lead Free
Lead Free
Length
6.15mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
104W
Mount
Surface Mount
Nominal Vgs
-1.4V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
6.25W
Radiation Hardening
No
Rds On Max
1.95mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
-1.4V
Turn-Off Delay Time
230ns
Turn-On Delay Time
100ns
Weight
0.01787oz
Width
5.15mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7137DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7137DP-T1-GE3 to view detailed technical specifications.
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