P-channel MOSFET transistor featuring a low 5.2mΩ drain-source on-resistance at 10V gate-source voltage, supporting a continuous drain current of 50A and a drain-source voltage of 30V. This surface-mount device in a SOIC package offers a maximum power dissipation of 69W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 100ns turn-on delay, 230ns turn-off delay, and an 110ns fall time, with an input capacitance of 4.59nF. RoHS compliant and lead-free.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Vishay SI7149DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 5.2mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.2MR |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.04mm |
| Input Capacitance | 4.59nF |
| Lead Free | Lead Free |
| Length | 5.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 69W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 5.2mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | -1.2V |
| Turn-Off Delay Time | 230ns |
| Turn-On Delay Time | 100ns |
| Width | 6.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7149DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7149DP-T1-GE3 to view detailed technical specifications.
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