The SI7160DP-T1-GE3 is a surface mount N-CHANNEL TrenchFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 27.7W and a maximum drain to source breakdown voltage of 30V. The device features a drain to source resistance of 8.7mR and a continuous drain current of 17.8A. It is packaged in a SOIC package and is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power5W
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Technical Specifications
Vishay SI7160DP-T1-GE3 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 17.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 2.97nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 27.7W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5W |
| Radiation Hardening | No |
| Rds On Max | 8.7mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 29ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7160DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7160DP-T1-GE3 to view detailed technical specifications.
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