N-channel Power MOSFET, 30V Vds, 40A continuous drain current, and 2.7mΩ low Rds(on). This surface-mount component features a 4.9mm length, 5.89mm width, and 1.04mm height in a leadless PowerPAK SOP-8 package. With a maximum power dissipation of 48W and operating temperatures from -55°C to 150°C, it offers fast switching speeds with an 8ns fall time. This RoHS and Halogen-free device is designed for general-purpose power applications.
Vishay SI7170DP-T1-GE3 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 40A |
| Drain to Source Resistance | 2.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.04mm |
| Input Capacitance | 4.355nF |
| Lead Free | Lead Free |
| Length | 4.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 3.4mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 2.6V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 15ns |
| Weight | 0.01787oz |
| Width | 5.89mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay SI7170DP-T1-GE3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
