N-channel MOSFET with 100V drain-source voltage and 60A continuous drain current. Features low 14mΩ drain-source on-resistance and 6.25W maximum power dissipation. Operates from -55°C to 150°C, with a nominal gate-source voltage of 4.5V and a maximum of 20V. Packaged in a PPAK SO-8 surface-mount format, this RoHS compliant component offers fast switching with turn-on delay of 21ns and fall time of 11ns.
MountingSurface Mount
PolarityN-CHANNEL
Power6.25W
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Technical Specifications
Vishay SI7178DP-T1-GE3 technical specifications.
General
Continuous Drain Current (ID)
60A
Drain to Source Resistance
14mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
14mR
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
1.04mm
Input Capacitance
2.87nF
Lead Free
Lead Free
Length
4.9mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.25W
Mount
Surface Mount
Nominal Vgs
4.5V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
6.25W
Radiation Hardening
No
Rds On Max
14mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
4.5V
Turn-Off Delay Time
27ns
Turn-On Delay Time
21ns
Weight
0.01787oz
Width
5.89mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI7178DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7178DP-T1-GE3 to view detailed technical specifications.
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