N-channel Power MOSFET featuring 80V drain-source breakdown voltage and 14.5A continuous drain current. Offers a low 12.5mΩ maximum drain-source on-resistance. Designed for surface mounting with a PowerPAK SO package, operating from -55°C to 150°C. Includes fast switching characteristics with a 25ns turn-on delay and 10ns fall time. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power5.2W
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Technical Specifications
Vishay SI7186DP-T1-E3 technical specifications.
General
| Continuous Drain Current (ID) | 14.5A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 12.5mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 12.5MR |
| Dual Supply Voltage | 80V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.84nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.2W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 5.2W |
| Radiation Hardening | No |
| Rds On Max | 12.5mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 25ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7186DP-T1-E3 Datasheet
Download the complete datasheet for Vishay SI7186DP-T1-E3 to view detailed technical specifications.
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