SI7190DP-T1-GE3

N-CH MOSFET 250V 18.4A 118mR SOIC

N-channel MOSFET, 250V Drain-Source Voltage, 18.4A Continuous Drain Current, and 118mR maximum Drain-Source On Resistance. Features a 2V threshold voltage, 9ns fall time, 13ns turn-on delay, and 28ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 96W. Surface mountable in a 5.89mm x 4.9mm x 1.04mm SOIC package.

PackageSOIC

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Vishay SI7190DP-T1-GE3 technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	18.4A
Drain to Source Resistance	118mR
Drain to Source Voltage (Vdss)	250V
Drain-source On Resistance-Max	118MR
Fall Time	9ns
Gate to Source Voltage (Vgs)	20V
Height	1.04mm
Input Capacitance	2.214nF
Lead Free	Lead Free
Length	4.9mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	96W
Mount	Surface Mount
Number of Channels	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Radiation Hardening	No
Rds On Max	118mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Series	TrenchFET®
Threshold Voltage	2V
Turn-Off Delay Time	28ns
Turn-On Delay Time	13ns
Weight	0.01787oz
Width	5.89mm