Dual N-Channel MOSFET featuring 30V drain-source voltage and 8A continuous drain current. Offers low 17.5mΩ drain-to-source resistance at 10V gate-source voltage. Includes 900pF input capacitance and 1.2V threshold voltage. Designed for surface mounting in a SOIC package, operating from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
Vishay SI7270DP-T1-GE3 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
8A
Drain to Source Resistance
17.5mR
Drain to Source Voltage (Vdss)
30V
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
900pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
17.8W
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
21mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
1.2V
Turn-Off Delay Time
18ns
Turn-On Delay Time
10ns
Compliance
RoHS
Compliant
Datasheet
Vishay SI7270DP-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7270DP-T1-GE3 to view detailed technical specifications.
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