The SI7315DN-T1-GE3 is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 52W and a continuous drain current of -8.9A. The device is packaged in a small outline package, S-PDSO-C5, and is RoHS compliant. It is suitable for high-power applications and is available in quantities of 3000 per reel.
MountingSurface Mount
PolarityP-CHANNEL
Power3.8W
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Technical Specifications
Vishay SI7315DN-T1-GE3 technical specifications.
General
| Continuous Drain Current (ID) | -8.9A |
| Drain to Source Resistance | 262mR |
| Drain to Source Voltage (Vdss) | -150V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 880pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.8W |
| Rds On Max | 315mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI7315DN-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI7315DN-T1-GE3 to view detailed technical specifications.
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